Interface Engineering of Metal‐Oxide Field‐Effect Transistors for Low‐Drift pH Sensing (Adv. Mater. Interfaces 20/2021)
Source abstract
Abstract
Metal-Oxide Field-Effect Transistors In article number 2100314, Huihui Ren, Bowen Zhu, and co-workers demonstrate that a thin Al2O3 layer can effectively passivate solution-processed In2O3 based field-effect transistors (FETs), enabling high stability, low leakage current, and low signal drift toward pH sensing. This study opens new opportunities for constructing high-performance FETs-based biosensors.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Analytical Chemistry and Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province School of Engineering Westlake University Hangzhou 310024 China
Zhejiang University Hangzhou 310027 China
Key Laboratory of Wide Band Gap Semiconductor Technology School of Microelectronics Xidian University Xi'an 710071 China
Instrumentation and Service Center for Physical Sciences Westlake University Hangzhou 310024 China
Institute of Advanced Technology Westlake Institute for Advanced Study Hangzhou 310024 China
References
Reference metadata was not supplied for this record.