Performance of CsPbBr3/HfO2/Si: Performance‐Enhanced CsPbBr3/HfO2/Si Heterostructure Optoelectronics through the Tunneling Effect (Adv. Mater. Interfaces 11/2021)
Source abstract
Abstract
The tunneling effect through a thin HfO2 layer enables a CsPbBr3/HfO2/Si heterostructure photodetector with enhanced optoelectronic performance. In article number 2100279, Yu Zhang and co-workers demonstrate that the optoelectronic performance of the CsPbBr3/HfO2/Si heterostructure device can be modulated through both Vds and Vgs, providing flexibility for different applications.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Semiconductor Detectors and Materials
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Affiliations
Institute of Marine Science and Technology Shandong University Qingdao 266200 China
Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong Institute for Advanced Interdisciplinary Research(iAIR) University of Jinan Jinan 250022 China
State Key Laboratory of Crystal Materials Shandong University Jinan 250100 China
References
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