Wafer Bonding: Solution‐Processed‐ZnO‐Mediated Semiconductor Bonding with High Mechanical Stability, Electrical Conductivity, Optical Transparency, and Roughness Tolerance (Adv. Mater. Interfaces 22/2019)

Semiconductor bonding mediated by a transparent conductive oxide, ZnO, prepared by a simple solution spin-on process, is developed. The ZnO synthesis, sintering, and bonding processes are realized in a single step. The ZnO-mediated bonds simultaneously exhibit high mechanical stability, electrical conductivity, optical transparency, and roughness tolerance. This efficient bonding scheme leads to a low-cost, high-performance optoelectronic device fabrication and integration. More details can be found in article number 1900921 by Tatsushi Yamashita, Katsuaki Tanabe, and co-workers.