Oxide Microelectronics: Monolithically Integrated Circuits from Functional Oxides (Adv. Mater. Interfaces 1/2014)

The cover displays an optical microscopy image (interference contrast) of a monolithically integrated all-oxide NMOS chip, showing sections of five ring-oscillators. The field effect transistors of these integrated circuits are based on the conducting, twodimensional electron liquid formed at LaAlO3/SrTiO3 interfaces. This work, reported in article 1300031 by R. Jany and co-workers, represents a breakthrough in oxide electronics. Providing the capability to actively process the signals of oxide devices such as sensors on-chip, these results illustrate the practicability and the potential of electronics based on functional oxides