Field Effect Transistors: High‐Performance Phosphorene‐Based Transistors Using a Novel Exfoliation‐Free Direct Crystallization on Silicon Substrates (Adv. Mater. Interfaces 17/2020)

Laser-assisted evolution of few-layer phosphorene sheets directly on silicon substrates on desired locations is introduced. A 1064 nm laser source and a combination of Ar:O2 and He:H2 gases are exploited for an exfoliation/transfer-free direct crystallization of red phosphorus. High field-effect mobility of 1450 cm2 (V s)−1 and on/off ratio of 103 are obtained. More details can be found in article number 2000774 by Shams Mohajerzadeh and co-workers.