DataVXAdvanced Materials InterfacesPaper
journal article·2014-09Open access

Bandgap Enhancement: Bandgap Control of the Oxygen‐Vacancy‐Induced Two‐Dimensional Electron Gas in SrTiO3 (Adv. Mater. Interfaces 6/2014)

Z. Q. Liu, W. Lu, S. W. Zeng, J. W. Deng, Z. Huang, C. J. Li, M. Motapothula, W. M. Lü, L. Sun, K. Han, J. Q. Zhong, P. Yang, N. N. Bao, W. Chen, J. S. Chen, Y. P. Feng, J. M. D. Coey, T. Venkatesan, Ariando

Advanced Materials Interfaces· Volume 1· Issue 6
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Source abstract

Abstract

SrTiO3 to modern oxide electronics is like silicon to the entire semiconductor industry. Z. Q. Liu, Ariando, and co-workers show in article 1400155 that the bandgap of SrTiO3 can be 20% larger in thin films than in the bulk. Such bandgap enhancement can change several properties. For example, it can vary the electronic and magnetic phases of SrTiO3-based interface systems.
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Research context

Electronic materials

OpenAlex topics: Electronic and Structural Properties of Oxides · Semiconductor materials and devices

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Affiliations

NUSNNI‐Nanocore, National University of Singapore 117411 Singapore

Department of Physics National University of Singapore 117542 Singapore

Department of Materials Science and Engineering National University of Singapore 117576 Singapore

National University of Singapore (NUS) Graduate School for Integrative Sciences and Engineering 28 Medical Drive 117456 Singapore

Center for Ion Beam Applications National University of Singapore 117542 Singapore

Singapore Synchrotron Light Source (SSLS) National University of Singapore 5 Research Link 117603 Singapore

School of Physics Trinity College Dublin 2 Ireland

Department of Electrical and Computer Engineering National University of Singapore 117576 Singapore

References

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