Silicon Nanocrystals: Direct Bandgap Silicon: Tensile‐Strained Silicon Nanocrystals (Adv. Mater. Interfaces 2/2014)
Source abstract
Abstract
Methyl-passivated silicon nanocrystals, such as the one in the foreground of the cover image, are capable of fast and efficient luminescence although their bulk counterpart is an indirect semiconductor. K. Kû sová and co-workers show in article 1300042 that appropriately chosen surface capping tensilestrains the crystalline core and thus transforms this form of silicon into a material with a fundamental direct bandgap.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Silicon Nanostructures and Photoluminescence
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Affiliations
Institute of Physics of the Academy of Sciences of the Czech Republic v.v.i., Cukrovarnická 10, Prague 6 162 00 Czech Republic
Faculty of Mathematics and Physics Charles University Ke Karlovu 5, Prague 2 121 16 Czech Republic
References
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