Characteristics of ALD‐ZnO Thin Film Transistor Using H2O and H2O2 as Oxygen Sources (Adv. Mater. Interfaces 15/2022)
Source abstract
Abstract
Characteristics of ALD-ZnO Thin Film Transistor In article number 2101953, Jun Yang, Amin Bahrami, Kornelius Nielsch, and co-workers report that during atomic layer deposition (ALD)-ZnO process, H2O2 provides an oxygen-rich environment inducing less oxygen vacancies into the ZnO thin film. After applying a bias stress of 10 V for 3600 s, the threshold voltage shift for H2O2-ZnO thin film transistor is 0.13 V.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: ZnO doping and properties
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Affiliations
Institute for Metallic Materials Leibniz Institute of Solid State and Materials Science 01069 Dresden Germany
Institute of Materials Science Technische Universität Dresden 01062 Dresden Germany
Key Laboratory of Advanced Display and System Application Ministry of Education Shanghai University Shanghai 200072 China
Department of Materials Science and Engineering Seoul National University Seoul 08826 Republic of Korea
Institute for Complex Materials Leibniz Institute of Solid State and Materials Science 01069 Dresden Germany
References
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