Formation of Metallic States between Insulating SnO and SnO2
Source abstract
Abstract
In this paper, stoichiometric SnO/SnO2 interfaces are investigated by density functional theory. Although both component oxides are semiconductors, it is demonstrated that metallic states are formed at the interface and the mechanisms behind this observation are clarified. The metallic interface dopes the SnO and SnO2 grains with delocalized carriers, which contribute to the conductivity of the grains, besides intrinsic defects.
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Research context
OpenAlex topics: Gas Sensing Nanomaterials and Sensors · ZnO doping and properties · Electronic and Structural Properties of Oxides
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Affiliations
Physical Science & Engineering Division (PSE) King Abdullah University of Science and Technology (KAUST) Thuwal 23955‐6900 Saudi Arabia
Funding
King Abdullah University of Science and Technology
References (36)
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