Field‐Effect Transistors Using Thin Flakes of Misfit Layer Compound (LaS)_1.20CrS₂

Abstract Misfit layer compounds consist of two sublattices that are incommensurately modulated. These sublattices have the structures of cubic monochalcogenide and transition‐metal dichalcogenide monolayers. In this work, a semiconducting misfit layer compound (LaS)_1.20CrS₂ is synthesized by chemical vapor transport. In absence of intervening LaS layers, a CrS₂ layer does not exist in a stable state. Using thin flakes of (LaS)_1.20CrS₂ obtained by mechanical exfoliation, field‐effect transistors are fabricated. The devices show n‐type transport characteristics. An on/off ratio of ≈250 (at 120 K) and mobility of 0.3 cm² V⁻¹ s⁻¹ (at room temperature) are observed. Temperature dependence of the conductance obeys thermal activation with the activation energy nearly linearly dependent on the gate voltage. This gate‐voltage dependence suggests that the density of trap states is considerably larger than that of MoS₂ thin flakes.