Toward the Atomically Abrupt Interfaces of SiO_x/Semiconductor Junctions

A novel simple method to produce a high-quality interface between semiconductor (e.g., Ge or III-V) and dielectric film (i.e., SiO2) is suggested. A nonoxygen element is deposited directly on an oxidized substrate at T ≥ 300 °C, leading to semiconductor reduction and dielectric film growth. As a result, the formed interface is atomically abrupt and has a low density of defect gap states. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.