Effect of Mesa Sidewall Angle on 4H‐Silicon Carbide Trench Filling Epitaxy Using Trichlorosilane and Hydrogen Chloride (Adv. Mater. Interfaces 33/2024)

Silicon Carbide The wide bandgap semiconductor material Silicon Carbide (SiC) is an attractive proposition to replace Silicon for the development of advanced novel power electronic devices, such as superjunction devices. Trench refill epitaxy (TFE) has been developed, where semiconductor processing techniques have been used to create microstructures in SiC and refilled with single crystal SiC to fabricate these exotic superjunction structures. More details can be found in article 2400466 by Vishal Shah and co-workers.