Thickness‐Dependent Energy‐Level Alignment at the Organic–Organic Interface Induced by Templated Gap States
Source abstract
Abstract
Abstract Planar organic heterostructures are widely explored and employed in photovoltaic cells, light‐emitting diodes, and bilayer field‐effect transistors. An important role for device performance plays the energy level alignment at the inorganic–organic and organic–organic interfaces. In this work, incremental ultraviolet photoelectron spectroscopy measurements and real‐time X‐ray scattering experiments are used to thoroughly investigate the thickness‐dependent electronic and structural properties of a perfluoropentacene (PFP)‐on‐[6]phenacene heterostructure. For both materials an incremental increase of the material work function (positive interface dipole) is found. For [6]phenacene, this can be assigned to a thickness‐dependent change of molecular arrangement evident from a change of the unit cell volume and a consequential alteration of the ionization energy. In the case of PFP the interface dipole stems from charge transfer from the substrate into unoccupied molecular orbitals resulting in an electrostatic potential on the surface. The magnitude of this potential can be correlated with an increased gap state density resulting from templated structural defects mediated by the bottom layer.
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Research context
OpenAlex topics: Organic Electronics and Photovoltaics · Molecular Junctions and Nanostructures · Perovskite Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institute for Applied Physics University of Tübingen 72726 Tübingen Germany
Diamond Light Source Didcot Oxon OX11 0DE UK
Department of Photo‐Molecular Science Institute for Molecular Science Okazaki 444‐8585 Japan
Funding
Deutsche Forschungsgemeinschaft
References (41)
Show source-provided references
1. Kim D. · J. Am. Chem. Soc. · 2011 · 133
2. 10.1088/0953-8984/20/18/18400810.1088/0953-8984/20/18/184008 ↗
3. 10.1021/acs.accounts.5b0043810.1021/acs.accounts.5b00438 ↗
4. 10.1038/natrevmats.2016.5610.1038/natrevmats.2016.56 ↗
5. 10.1002/adma.20050171710.1002/adma.200501717 ↗
6. 10.1103/PhysRevB.75.11532710.1103/PhysRevB.75.115327 ↗
7. 10.1021/acs.jpcc.8b0258110.1021/acs.jpcc.8b02581 ↗
8. 10.1002/adma.20190590910.1002/adma.201905909 ↗
9. 10.1039/c2cp90152h10.1039/c2cp90152h ↗
10. 10.1002/(SICI)1521-4095(199906)11:8<605::AID-ADMA605>3.0.CO;2-Q10.1002/(SICI)1521-4095(199906)11:8<605::AID-ADMA605>3.0.CO;2-Q ↗
11. 10.1002/adma.20080289310.1002/adma.200802893 ↗
12. 10.1088/1361-648X/aa5a6c10.1088/1361-648X/aa5a6c ↗
13. 10.1103/PhysRevB.89.11531910.1103/PhysRevB.89.115319 ↗
14. 10.1103/PhysRevB.92.11510210.1103/PhysRevB.92.115102 ↗
15. 10.1088/1361-6463/aa840f10.1088/1361-6463/aa840f ↗
16. 10.1063/1.505491310.1063/1.5054913 ↗
17. Foggiatto A. L. · Jpn. J. Appl. Phys. · 2019 · 58
18. 10.1103/PhysRevLett.110.26760210.1103/PhysRevLett.110.267602 ↗
19. J.Hagenlocher N.Scheffczyk K.Broch G.Duva N.Russegger L.Egenberger R.Banerjee S.Kera F.Schreiber A.Hinderhofer unpublished2021.
20. 10.1063/1.333257710.1063/1.3332577 ↗
21. 10.1016/j.cplett.2005.08.11310.1016/j.cplett.2005.08.113 ↗
22. 10.1103/PhysRevLett.93.08680210.1103/PhysRevLett.93.086802 ↗
23. 10.1002/cphc.20110073710.1002/cphc.201100737 ↗
24. 10.1021/jp310605610.1021/jp3106056 ↗
25. 10.1021/jp203003m10.1021/jp203003m ↗
26. 10.1021/acsami.5b0740910.1021/acsami.5b07409 ↗
27. 10.1021/ja803291a10.1021/ja803291a ↗
28. 10.1063/1.474720110.1063/1.4747201 ↗
29. 10.1002/adma.20060182510.1002/adma.200601825 ↗
30. 10.1103/PhysRevB.83.24530710.1103/PhysRevB.83.245307 ↗
31. 10.1038/nmat211910.1038/nmat2119 ↗
32. 10.1088/0953-8984/20/18/18400510.1088/0953-8984/20/18/184005 ↗
33. 10.1002/pssa.20040433410.1002/pssa.200404334 ↗
34. 10.1021/cr941014o10.1021/cr941014o ↗
35. 10.1209/0295-5075/91/5600210.1209/0295-5075/91/56002 ↗
36. 10.1002/adom.20200219310.1002/adom.202002193 ↗
37. 10.1021/jp067136p10.1021/jp067136p ↗
38. 10.1103/PhysRevB.92.07514510.1103/PhysRevB.92.075145 ↗
39. 10.1126/sciadv.150112710.1126/sciadv.1501127 ↗
40. 10.1038/ncomms517410.1038/ncomms5174 ↗
41. 10.1002/admi.20140000410.1002/admi.201400004 ↗