Postgrowth Control of the Interfacial Oxide Thickness in Semiconductor–Insulator–Semiconductor Heterojunctions
Source abstract
Abstract
Abstract The electronic properties of the heterojunction formed by chemical bath deposition of a thorium‐ and oxygen‐doped PbS nanostructured layer on GaAs substrate as a function of postgrowth thermal treatments are studied. A correlation is found between the heterojunction conductance and the duration of thermal treatment in air. In contrast to previous reports on the effect of air annealing on PbS films, where the conductance increased due to oxygen incorporation within the PbS, in this oxygen‐saturated system, the PbS properties are unaffected by exposure to oxygen. Control over the heterojunction conductance is achieved by tuning the interface oxide thickness, enabled by thermal treatment in air, resulting in the elimination of Fermi level pinning caused by interface induced gap states. The ability to control the interfacial insulator thickness post film‐growth is a unique feature of this system.
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Research context
OpenAlex topics: Quantum Dots Synthesis And Properties · ZnO doping and properties · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Ilse Katz Institute for Nanoscale Science and Technology Ben‐Gurion University of the Negev Be'er Sheva 8410501 Israel
Department of Solar Energy and Environmental Physics Swiss Institute for Dryland Environmental and Energy Research Jacob Blaustein Institutes for Desert Research Ben‐Gurion University of the Negev Midreshet Ben‐Gurion 8499000 Israel
Department of Materials Engineering Ben‐Gurion University of the Negev Be'er Sheva 8410501 Israel
Department of Electro‐Optics Engineering Ben‐Gurion University of the Negev Be'er Sheva 8410501 Israel
Department of Physics Nuclear Research Center Negev P.O. Box 9001 Be'er Sheva Israel
Funding
PAZY Foundation · Israel Science Foundation
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