DataVXAdvanced Materials InterfacesPaper
journal article·2015-03

Band‐Gap Engineering: Band‐Gap Engineering at a Semiconductor–Crystalline Oxide Interface (Adv. Mater. Interfaces 4/2015)

Mohammadreza Jahangir‐Moghadam, Kamyar Ahmadi‐Majlan, Xuan Shen, Timothy Droubay, Mark Bowden, Matthew Chrysler, Dong Su, Scott A. Chambers, Joseph H. Ngai

Advanced Materials Interfaces· Volume 2· Issue 4
Publisher page
Source abstract

Abstract

In article 1400497, J. H. Ngai and co-workers demonstrate that the band offset between single crystalline SrZrxTi1−xO3 and Ge can be tuned through the Zr content, providing a pathway to control electrical coupling between multifunctional oxides and semiconductors.
Source: openalex_inverted_index · Quality: baseline

Research context

Electronic materials

OpenAlex topics: Ferroelectric and Piezoelectric Materials · Electronic and Structural Properties of Oxides

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Affiliations

Department of Physics The University of Texas at Arlington Arlington TX USA

Department of Electrical Engineering The University of Texas at Arlington Arlington TX USA

Department of Materials Science and Engineering The University of Texas at Arlington Arlington TX USA

Center for Functional Nanomaterials Brookhaven National Laboratory Upton NY USA

National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering Nanjing University Nanjing 210093 China

Physical Sciences Division Pacific Northwest National Laboratory Richland WA USA

Environmental Molecular Sciences Laboratory Pacific Northwest National Laboratory Richland WA USA

References

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