DataVXAdvanced Materials InterfacesPaper
journal article·2017-11

Decreasing Defect‐State Density of Al2O3/GaxIn1−xAs Device Interfaces with InOx Structures

Jaakko Mäkelä, Marjukka Tuominen, Johnny Dahl, Sari Granroth, Muhammad Yasir, Juha‐Pekka Lehtiö, Rami‐Roope Uusitalo, Mikhail Kuzmin, Marko Punkkinen, Pekka Laukkanen, Kalevi Kokko, Roberto Félix, Mika Lastusaari, Ville Polojärvi, Jari Lyytikäinen, Antti Tukiainen, Mircea Guina

Advanced Materials Interfaces· Volume 4· Issue 22
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Source abstract

Abstract

Abstract Control of defect densities at insulator/GaxIn1−xAs interfaces is essential for optimal operation of various devices like transistors and infrared detectors to suppress, for example, nonradiative recombination, Fermi‐level pinning, and leakage currents. It is reported that a thin InOx interface layer is useful to limit the formation of these defects by showing effect of InOx on quantum efficiency of Ga0.45In0.55As detector and on photoluminescence of GaAs. A study of the Al2O3/GaAs interface via hard X‐ray synchrotron photoelectron spectroscopy reveals chemical structure changes at the interface induced by this beneficial InOx incorporation: the InOx sheet acts as an O diffusion barrier that prevents oxidation of GaAs and concomitant As bond rupture.
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Research context

Electronic materials

OpenAlex topics: Semiconductor materials and devices · Integrated Circuits and Semiconductor Failure Analysis · Advancements in Semiconductor Devices and Circuit Design

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Physics and Astronomy University of Turku FI‐20014 Turku Finland

Ioffe Physical‐Technical Institute Russian Academy of Sciences St. Petersburg 194021 Russian Federation

Renewable Energy Helmholtz‐Zentrum Berlin für Materialien und Energie GmbH Hahn‐Meitner‐Platz 1 D‐14109 Berlin Germany

Department of Chemistry University of Turku FI‐20014 Turku Finland

Optoelectronics Research Centre Tampere University of Technology FI‐33101 Tampere Finland

Funding

Tekes · Academy of Finland · Seventh Framework Programme

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