journal article·2022-02

Unraveling the Mechanism of Remote Scavenging Effect at the InP/Al2O3 Interface Induced by Titanium Layer

Ze Feng, Yong Sun, Yuandong Sun, Xiao Chen, Yang Shen, Rong Huang, Zhiyun Li, Hu Wang, Ding Ding, Yue Peng, Yitong Wang, Meiyi Jing, Feng Lu, Weihua Wang, Yahui Cheng, Yi Cui, An Dingsun, Genquan Han, Hui Liu, Hong Dong

Advanced Materials Interfaces· Volume 9· Issue 4
Publisher page

Abstract

Abstract Low interface oxide concentration is desired for III‐V semiconductor/high k dielectrics stacks to get high‐performance devices. The remote scavenging effect is observed upon Ti metal deposition on the InP/Al2O3 system, characterized by in situ angle resolved X‐ray photoelectron spectroscopy and time‐of‐flight secondary ion mass spectrometry, as well as ex situ cross‐sectional transmission electron microscopy. The mechanism is investigated by O18 tracing. Two mechanisms are proposed for this remote scavenging effect. The impact of this remote scavenging effect is studied by metal oxide semiconductor (MOS) capacitors fabrication and characterization. This work sheds light on InP‐based MOS devices.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Semiconductor materials and devices · Ferroelectric and Negative Capacitance Devices · Advanced Memory and Neural Computing

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Engineering Research Center of Thin Film Optoelectronics Technology Ministry of Education Nankai University Tianjin 300350 China

Laboratory of Physical & Chemical Testing and Failure Analysis Ningbo Branch of Ordnance Science Institute of China Ningbo 315103 China

Suzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO) Chinese Academy of Sciences Suzhou 215123 China

State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of Microelectronics Xidian University Xi'an 710071 China

Funding

National Key Research and Development Program of China · National Natural Science Foundation of China

References (37)

Show source-provided references
1. 10.1038/nature1067710.1038/nature10677 ↗
2. 10.1147/rd.462.023510.1147/rd.462.0235 ↗
3. 10.1143/APEX.5.06400210.1143/APEX.5.064002 ↗
4. Radosavljevic M. · 2009 · 1
5. 10.1063/1.365175410.1063/1.3651754 ↗
6. 10.1063/1.479966010.1063/1.4799660 ↗
7. 10.1007/978-1-4684-4835-110.1007/978-1-4684-4835-1 ↗
8. 10.1063/1.481793210.1063/1.4817932 ↗
9. 10.1063/1.365600110.1063/1.3656001 ↗
10. 10.1063/1.486117710.1063/1.4861177 ↗
11. 10.1063/1.177663610.1063/1.1776636 ↗
12. 10.1063/1.348145310.1063/1.3481453 ↗
13. 10.1063/1.489864510.1063/1.4898645 ↗
14. d)J.Huang D.Heh P.Sivasubramani P. D.Kirsch G.Bersuker D. C.Gilmer M. A.Quevedo‐Lopez M. M.Hussain A.Majhi P.Lysaght H.Park A.Goel C.Young C. S.Park C.Park M.Cruz V.Diaz P. Y.Hung J.Price H. H.Tseng R.Jammy 2009 Symposium on VLSI Technology IEEE Piscataway NJ2009 pp.34–35;
15. 10.7567/APEX.8.06130410.7567/APEX.8.061304 ↗
16. 10.1063/1.495887410.1063/1.4958874 ↗
17. g)T.Ando M. M.Frank K.Choi C.Choi J.Bruley M.Hopstaken M.Copel E.Cartier A.Kerber A.Callegari D.Lacey S.Brown Q.Yang V.Narayanan 2009 IEEE Int. Electron Devices Meeting (IEDM) IEEE Piscataway NJ2009 pp.1–4;10.1109/IEDM.2009.5424335 ↗
18. 10.1021/acsami.6b0295710.1021/acsami.6b02957 ↗
19. 10.1021/acsami.8b2236210.1021/acsami.8b22362 ↗
20. The Peak‐Fitting Software Employed Was XPSPEAK 4.1 Written by Raymund Kwok http://xpspeak.software.onformer.com/4.1/.
21. 10.1063/1.481793210.1063/1.4817932 ↗
22. 10.1002/sia.74015110210.1002/sia.740151102 ↗
23. 10.1016/j.elspec.2011.08.00410.1016/j.elspec.2011.08.004 ↗
24. 10.1143/APEX.4.12570110.1143/APEX.4.125701 ↗
25. 10.1016/j.susc.2006.05.02110.1016/j.susc.2006.05.021 ↗
26. 10.1149/2.010112jes10.1149/2.010112jes ↗
27. 10.1021/cm304070h10.1021/cm304070h ↗
28. 10.1016/j.apsusc.2010.10.05110.1016/j.apsusc.2010.10.051 ↗
29. 10.1063/1.311096810.1063/1.3110968 ↗
30. 10.1016/j.apsusc.2019.05.28210.1016/j.apsusc.2019.05.282 ↗
31. A. V.Naumkin A.Kraut‐Vass S. W.Gaarenstroom A. C. J.Powell https://doi.org/10.18434/T4T88K(accessed: September 2012).
32. 10.1021/jp804296a10.1021/jp804296a ↗
33. 10.1021/acsami.7b1538410.1021/acsami.7b15384 ↗
34. Dection limit provided by ION TOF.
35. 10.1088/2053-1583/ab834b10.1088/2053-1583/ab834b ↗
36. 10.1116/1.480247810.1116/1.4802478 ↗
37. Lide D. R. · 2007