Source abstract
Abstract
Abstract Thin‐film devices are typically fabricated through a bottom‐up approach, wherein the constituents are deposited sequentially from the bottom to top layer. This method requires the precise management of the heterointerfaces, which leads to complicated integration issues particularly in solution‐processed organic thin‐film transistors (OTFTs). This limitation arises because a surface suitable for the printing of semiconductors is not necessarily suitable for maximizing the electronic properties of OTFTs. To overcome this, a transfer technique of organic semiconductor (OSC) thin films has been studied. This enables facile transfer of the OSC thin film from a hydrophilic template to any given substrate; thus, the printing substrate and destination substrate can be optimized individually. Here, a nano‐ground glass (NGG) is developed whose surface is chemically etched using a mild base. The NGG functions as a thermally stable, superhydrophilic template for printing high‐quality single‐crystal OSC thin films. To evaluate the practical applicability of the NGG, an n‐type OSC, which requires a relatively high temperature of around 150 °C during crystal growth, is fabricated. The fabricated OTFTs exhibit an outstanding electron mobility of 2.2 cm2 V−1 s−1. The NGG proposed in this study can be utilized for the fabrication of a wide variety of printable materials.
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Research context
OpenAlex topics: Advanced Sensor and Energy Harvesting Materials · Organic Electronics and Photovoltaics · Thin-Film Transistor Technologies
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Affiliations
Material Innovation Research Center (MIRC) and Department of Advanced Materials Science Graduate School of Frontier Sciences The University of Tokyo 5‐1‐5 Kashiwanoha Kashiwa Chiba 277‐8561 Japan
AIST‐UTokyo Advanced Operando‐Measurement Technology Open Innovation Laboratory (OPERANDO‐OIL) National Institute of Advanced Industrial Science and Technology (AIST) 5‐1‐5 Kashiwanoha Kashiwa Chiba 277‐8561 Japan
Japan Science and Technology Agency (JST) Precursory Research for Embryonic Science and Technology (PRESTO) 4‐1‐8 Honcho Kawaguchi Saitama 332‐0012 Japan
International Center of Materials Nanoarchitectonics (WPI‐MANA) National Institute for Materials Science (NIMS) 1‐1 Namiki Tsukuba Ibaraki 305‐0044 Japan
References (38)
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