Interface Engineering of Molecular Charge Storage Dielectric Layers for Organic Thin‐Film Memory Transistors
Source abstract
Abstract
Mixed self-assembled monolayers of C60-functionalized and different long-chained insulating phosphonic acids provide molecular scale non-volatile memory dielectrics for low-voltage organic thin-film transistors. The memory retention depends on the insulation of the C60 moiety and can be improved by embedding into the insulating SAM matrix and covering by corresponding insulating molecules.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Semiconductor materials and devices · Advanced Memory and Neural Computing · Molecular Junctions and Nanostructures
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Organic Materials and Devices (OMD) Department of Materials Science University Erlangen‐Nürnberg Martensstrasse 7 91058 Erlangen Germany
Crystallography and Structural Physics University Erlangen‐Nürnberg Staudtstrasse 3 91058 Erlangen Germany
Department of Chemistry and Pharmacy University Erlangen‐Nürnberg Henkestrasse 42 91054 Erlangen Germany
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