Piezoelectricity Across a Strain‐Induced Isosymmetric Ferri‐to‐Ferroelectric Transition
Source abstract
Abstract
We identify a first‐order, isosymmetric transition between a ferrielectric (FiE) and ferroelectric (FE) state in A‐site ordered LaScO3/BiScO3 and LaInO3/BiInO3 superlattices. Such a previously unreported ferroic transition is driven by the easy switching of cation displacements without changing the overall polarization direction or crystallographic symmetry. Epitaxial strains less than 2% are predicted to be sufficient to traverse the phase boundary, across which we capture a ≈5× increase in electric polarization. Unlike conventional Pb‐based perovskite ceramics with a morphotropic phase boundary (MPB) that show polarization rotation, we predict an electromechanical response up to 102 pC/N in the vicinity of the FiE‐FE phase boundary due to polarization switching without any change in symmetry. We propose this transition as an alternative ferroic transition to obtain a piezoelectric response, with the additional advantage of occurring in benign chemistries without chemical disorder.
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Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Multiferroics and related materials · Acoustic Wave Resonator Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Frontier Institute of Science & Technology, Xi' an Jiaotong University Xi' an 710049 China
Department of Materials Science & Engineering Drexel University Philadelphia PA 19104 USA
References (58)
Show source-provided references
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31. We estimate the elastic energy associated with thin film epitaxy as follows: The elastic energy of a bulk material due to the strain can be written as: whereCijklis the elastic tensor and∈ijand∈klare strain tensors. For epitaxial strain induced by a pseudo‐cubic substrate the strain tensors simplify as and. Using the elastic constants calculated for LaScO3/BiScO3in Table S6 we estimate 1% epitaxial strain gives an elastic energy of 0.88 meV/Å3(58.5 meV/f.u.) comparable with the energy difference between the FiE and FE phase. Therefore the transition between the two phases should be accessible with thin film epitaxy.
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