DataVXAdvanced Materials InterfacesPaper
journal article·2023-04Open access

Annealing‐Induced Chemical Interaction at the Ag/In2O3:H Interface as Revealed by In Situ Photoelectron Spectroscopy

Ting Xiao, Darja Erfurt, Roberto Félix, Xiaxia Liao, Johannes Frisch, Daniel Abou‐Ras, Katherine A. Mazzio, Regan G. Wilks, Rutger Schlatmann, Marcus Bär

Advanced Materials Interfaces· Volume 10· Issue 11
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Abstract

Abstract Hydrogen‐doped In2O3 (In2O3:H) is highly conductive while maintaining extraordinary transparency, thus making it a very attractive material for applications in optoelectronic devices such as (multijunction) solar cells or light‐emitting devices. However, the corresponding metal/In2O3:H contacts may exhibit undesirably high resistances, significantly deteriorating device performance. To gain insight into the underlying efficiency‐limiting mechanism, hard X‐ray photoelectron spectroscopy is employed to in‐situ monitor annealing‐induced changes in the chemical structure of the Ag/In2O3:H interface system that is further complemented by ex‐situ electron microscopy analyses and contact resistance measurements. The observed evolution of the Ag‐ and In‐related photoelectron line intensities can be explained by significant intermixing across the Ag/In2O3:H interface. The corresponding lineshape broadening of the Ag 3d spectra is attributed to the formation of Ag2O and AgO, which becomes significant at temperatures above approximately 160 °C. However, after annealing to 300 °C, instead of the formation of an insulating AgOx interfacial layer, it is found i) In to be rather homogeneously distributed in the complete Ag/In2O3:H stack, ii) Ag diffusing into the In2O3:H, and iii) an improvement of the contact resistance rather than its often‐reported deterioration.
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Research context

Electronic materialsMaterials processing

OpenAlex topics: ZnO doping and properties · Ga2O3 and related materials · Electronic and Structural Properties of Oxides

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Interface Design Helmholtz‐Zentrum Berlin für Materialien und Energie GmbH (HZB) Albert‐Einstein‐Str. 15 12489 Berlin Germany

PVcomB Helmholtz‐Zentrum Berlin für Materialien und Energie GmbH (HZB) Schwarzschildstraße 3 12489 Berlin Germany

School of Physics and Materials Science Nanchang University Nanchang 330031 P. R. China

Department of Structure and Dynamics of Energy Materials Helmholtz‐Zentrum Berlin für Materialien und Energie GmbH (HZB) Hahn‐Meitner‐Platz 1 14109 Berlin Germany

Department of Chemistry Humboldt University of Berlin Brook‐Taylor‐Str. 2 12489 Berlin Germany

Joint Research Group Operando Battery Analysis Helmholtz‐Zentrum Berlin für Materialien und Energie GmbH Hahn‐Meitner‐Platz 1 14109 Berlin Germany

Energy Materials In‐situ Laboratory Berlin (EMIL) Helmholtz‐Zentrum Berlin für Materialien und Energie GmbH Albert‐Einstein‐Str. 15 12489 Berlin Germany

Hochschule für Technik und Wirtschaft Berlin Treskowallee 8 10318 Berlin Germany

Department of X‐ray Spectroscopy at Interfaces of Thin Films, Helmholtz‐Institute Erlangen‐Nürnberg for Renewable Energy (HI ERN) Albert‐Einstein‐Str. 15 12489 Berlin Germany

Department of Chemistry and Pharmacy Friedrich‐Alexander‐Universität Erlangen‐Nürnberg Egerlandstr. 3 91058 Erlangen Germany

Funding

Robert Bosch Stiftung · National Natural Science Foundation of China

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