Metal Oxide Semiconductors: Direct Photopatterning of Solution–Processed Amorphous Indium Zinc Oxide and Zinc Tin Oxide Semiconductors—A Chimie Douce Molecular Precursor Approach to Thin Film Electronic Oxides (Adv. Mater. Interfaces 15/2018)
Source abstract
Abstract
In article number 1800324 by Shawn Sanctis, Jörg J. Schneider, and co-workers direct photopatterning of indium zinc oxide (IZO) and zinc tin oxide (ZTO) semiconductors using molecular precursor compounds is described. Resulting thin film transistors exhibit mobilities of 7.8 cm2 V−1 s−1 (IZO) and 3.6 cm2 V−1 s−1 (ZTO), respectively. This straight-forward precursor UV-photo-patterning demonstrates its feasibility as a low-cost method towards integration of solution processed oxide films into large area electronics.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Fachbereich Chemie Eduard‐Zintl‐Institut für Anorganische and Physikalische Chemie Technische Universität Darmstadt Alarich‐Weiss‐Straße 12 64287 Darmstadt Germany
Institute for Applied Materials – Energy Storage Systems (IAM‐ESS) Karlsruhe Institute of Technology (KIT) Hermann‐von‐Helmholtz‐Platz 1 D‐76344 Eggenstein‐Leopoldshafen Germany
References
Reference metadata was not supplied for this record.