Effect of Moisture Exchange Caused by Low‐Temperature Annealing on Device Characteristics and Instability in InSnZnO Thin‐Film Transistors (Adv. Mater. Interfaces 14/2022)
Source abstract
Abstract
Effect of Moisture and Temperature on Thin-Film Transistors In article number 2102584, Zhiying Chen, Meng Zhang, and co-workers study the effect of moisture exchange on device characteristics and instability in InSnZnO thin-film transistors (TFTs). The temperature and relative humidity on the device surface jointly determine the moisture diffusion direction. The proposed model is beneficial for the reliable designing of InSnZnO TFTs in commercial applications.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Thin-Film Transistor Technologies · Surface Roughness and Optical Measurements · Industrial Vision Systems and Defect Detection
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
College of Electronic and Information Engineering Shenzhen University Shenzhen 518060 P. R. China
State Key Laboratory of Advanced Displays and Optoelectronics Technologies The Hong Kong University of Science and Technology Hong Kong SAR 999077 P. R. China
Institute of Microscale Optoelectronics (IMO) Shenzhen University Shenzhen 518060 P. R. China
Institute for Advanced Study Shenzhen University Shenzhen 518060 P. R. China
References
Reference metadata was not supplied for this record.