Correlative Spatial Mapping of Optoelectronic Properties in Large Area 2D MoS₂ Phototransistors

Abstract 2D materials‐based device performance is significantly affected by film non‐uniformity, especially for large area devices. Here, it investigates the dependence of large area 2D MoS₂ phototransistor performance on film morphology through correlative mapping. Monolayer MoS₂ films are quazi‐epitaxially synthesized on C‐plane sapphire (Al₂O₃ ) substrates by chemical vapor deposition, and the growth time and molybdenum trioxide MoO₃ precursor volume are varied to obtain variations in film morphology. Raman, photoluminescence, transmittance, and photocurrent maps are generated and compared with each other to obtain a holistic understanding of large area 2D optoelectronic device performance. For example, it shows that the photoluminescence peak shift and intensity can be used to investigate strain and other defects across multiple film morphologies, giving insight into their effects on the photogenerated current in these devices. It also combines photocurrent and absorption maps to generate large area high‐resolution external quantum efficiency and internal quantum efficiency maps for the devices. This study demonstrates the benefit of correlative mapping in the understanding and advancement of large area 2D material‐based electronic and optoelectronic devices.