DataVXAdvanced Materials InterfacesPaper
journal article·2022-02

Band Structure Engineering of WSe2 Homo‐Junction Interfaces via Thickness Control

June‐Chul Shin, Yeon Ho Kim, Kenji Watanabe, Takashi Taniguchi, Chul‐Ho Lee, Gwan‐Hyoung Lee

Advanced Materials Interfaces· Volume 9· Issue 4
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Source abstract

Abstract

Abstract Transition metal dichalcogenides (TMDs), one of the 2D semiconductors, such as molybdenum disulfide (MoS2) and tungsten diselenide (WSe2), exhibit novel physical and electronic properties that are useful for electronic and optoelectronic applications. Recently, the van der Waals heterostructures consisting of different 2D materials have been studied actively as various combinations of 2D materials can be fabricated with exceptional performance and physical properties. Nevertheless, study on homo‐junction of the same TMDs layers is lacking. Here, it is demonstrated that a vertical homo‐junction consisting of two WSe2 flakes with different thicknesses shows anti‐ambipolar transport behavior due to a thickness‐induced band offset at the interface. Photo‐response current is generated by tunneling‐mediated interlayer recombination at the WSe2 homo‐junction. The band structures of homo‐junctions of TMDs can be engineered by the thickness, which would be beneficial for understanding transport at the interfaces of 2D materials and developing the next generation devices.
Source: crossref · Quality: baseline

Research context

NanomaterialsElectronic materials

OpenAlex topics: 2D Materials and Applications · Graphene research and applications · MXene and MAX Phase Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Materials Science and Engineering Seoul National University Seoul 08826 Korea

KU‐KIST Graduate School of Converging Science and Technology Korea University Seoul 02841 Korea

Research Center for Functional Materials National Institute for Materials Science 1‐1 Namiki Tsukuba 305‐0044 Japan

International Center for Materials Nanoarchitectonics National Institute for Materials Science 1‐1 Namiki Tsukuba 305‐0044 Japan

Department of Integrative Energy Engineering Korea University Seoul 02841 Korea

Advanced Materials Research Division Korea Institute of Science and Technology Seoul 02792 Korea

Research Institute of Advanced Materials (RIAM) Seoul National University Seoul 08826 Korea

Institute of Engineering Research Seoul National University Seoul 08826 Korea

Funding

LG Display · National Research Foundation of Korea

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