Correction: High‐Performance ZnO Transistors Processed Via an Aqueous Carbon‐Free Metal Oxide Precursor Route at Temperatures Between 80–180 °C

Yen‐Hung Lin; Hendrik Faber; Kui Zhao; Qingxiao Wang; Aram Amassian; Martyn McLachlan; Thomas D. Anthopoulos

doi:10.1002/adma.201303701

journal article·2013-09-14Open access

Correction: High‐Performance ZnO Transistors Processed Via an Aqueous Carbon‐Free Metal Oxide Precursor Route at Temperatures Between 80–180 °C

Yen‐Hung Lin, Hendrik Faber, Kui Zhao, Qingxiao Wang, Aram Amassian, Martyn McLachlan, Thomas D. Anthopoulos

Advanced Materials· Volume 25· Issue 34

Publisher page Open full text

Source abstract

Abstract

In the above paper, one affiliation for author Yen-Hung Lin was missing: Yen-Hung Lin, Dutch Polymer Institute (DPI), P.O. Box 902, 5600 AX Eindhoven, The Netherlands The authors apologize for this inconvenience.

Only a short abstract or summary was supplied by the source.

Source: openalex_inverted_index · Quality: short

Research context

Polymers Electronic materials

OpenAlex topics: ZnO doping and properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References

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