Frontier Orbital Model of Semiconductor Surface Passivation: Dicarboxylic Acids on n- and p-GaAs

Semiconductor surface states can affect the performance of many electronic devices, because of the significant role they have in electron transport across device interfaces. These authors use a series of dicarboxylic acids on GaAs surfaces to show that the effect is due to a HOMO–LUMO type of interaction between the frontier orbitals of the molecules and the semiconductor surface states.