Shadow Epitaxy: Shadow Epitaxy for In Situ Growth of Generic Semiconductor/Superconductor Hybrids (Adv. Mater. 23/2020)
Source abstract
Abstract
In article number 1908411, Jesper Nygård, Thomas Sand Jespersen, and co-workers present “shadow epitaxy”, a novel method for controlled in situ growth of patterned metal/semiconductor hybrid nanostructures. The method enables exploration of material combinations previously unaccessible for epitaxial hybrid quantum devices. When applied to conventional materials the bottom-up patterning significantly improves the electrical stability and reproducibility of quantum devices.
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Research context
OpenAlex topics: Electronic and Structural Properties of Oxides
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Affiliations
Center for Quantum Devices Niels Bohr Institute University of Copenhagen Copenhagen 2100 Denmark
Danish Defence Research Center Ballerup 2750 Denmark
Department of Spintronics Institute of Physics Czech Academy of Sciences Praha 6 Prague 162 00 Czech Republic
DTU Nanolab Technical University of Denmark Kgs. Lyngby 2800 Denmark
Department of Mechanical Engineering Technical University of Denmark Kgs. Lyngby 2800 Denmark
References
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