Ambipolar Semiconductors: Simultaneous Optical Tuning of Hole and Electron Transport in Ambipolar WSe2 Interfaced with a Bicomponent Photochromic Layer: From High‐Mobility Transistors to Flexible Multilevel Memories (Adv. Mater. 11/2020)
Source abstract
Abstract
In article number 1907903, Paolo Samorì and co-workers report optically switchable multilevel high-mobility field-effect transistors based on few-layer ambipolar WSe2. By interfacing with a suitably designed bicomponent diarylethene blend, hole and electron transport in WSe2 can be simultaneously modulated with a high current-modulation efficiency, ensuring 128 distinct current levels, which corresponds to a data-storage capacity of 7 bit.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: 2D Materials and Applications · Chalcogenide Semiconductor Thin Films · Advanced Memory and Neural Computing
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Affiliations
University of Strasbourg CNRS ISIS UMR 7006, 8 Alleé Gaspard Monge Strasbourg F‐67000 France
Department of Chemistry and IRIS Adlershof Humboldt‐Universität zu Berlin Berlin 12489 Germany
DWI–Leibniz Institute for Interactive Materials Forckenbeckstr. 50 Aachen 52056 Germany
Institute of Technical and Macromolecular Chemistry RWTH Aachen University Worringer Weg 2 Aachen 52074 Germany
References
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