Field‐Effect Transistors: Contact‐Engineered Electrical Properties of MoS₂ Field‐Effect Transistors via Selectively Deposited Thiol‐Molecules (Adv. Mater. 18/2018)

A simple contact-engineering method, which introduces chemically adsorbed thiol-molecules as thin tunneling barriers between the metal electrodes and MoS2 channels, is proposed by Seungjun Chung, Takhee Lee, and co-workers in article number 1705540. The selectively deposited thiol-molecules provide additional tunneling paths at the contact regions, improving the carrier injection with lower activation energies in MoS2 field-effect transistors. Furthermore, asymmetric carrier-injection is feasible by inserting thiol-molecules at only one contact region.