Thin‐Film Electronics: Oxide Thin‐Film Electronics using All‐MXene Electrical Contacts (Adv. Mater. 15/2018)
Source abstract
Abstract
Two-dimensional metal carbides (MXenes) are successfully integrated into oxide semiconductor electrical switching devices for the first time by Husam N. Alshareef and co-workers in article number 1706656. Both p- and n-type oxide thin-film transistors are fabricated entirely using MXene electrical contacts. The inside front cover shows complementary metal oxide semiconductor inverters using two different semiconductor oxides.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: MXene and MAX Phase Materials · Advanced Sensor and Energy Harvesting Materials · Advanced Memory and Neural Computing
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Affiliations
Materials Science and Engineering Physical Science & Engineering Division King Abdullah University of Science and Technology (KAUST) Thuwal 23955‐6900 Saudi Arabia
References
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