DataVXAdvanced MaterialsPaper
journal article·2014-12

Perovskites: A Hard Oxide Semiconductor with A Direct and Narrow Bandgap and Switchable p–n Electrical Conduction (Adv. Mater. 48/2014)

Sergey V. Ovsyannikov, Alexander E. Karkin, Natalia V. Morozova, Vladimir V. Shchennikov, Elena Bykova, Artem M. Abakumov, Alexander A. Tsirlin, Konstantin V. Glazyrin, Leonid Dubrovinsky

Advanced Materials· Volume 26· Issue 48
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Source abstract

Abstract

Perovskite-type Mn2O3 described by S. V. Ovsyannikov and co-workers on page 8185, is a unique, hard semiconductor having a narrow and direct bandgap of 0.45 eV and switchable p-n electrical conduction. Pv-Mn2O3, comprising nontoxic and inexpensive elements, is much stronger than traditional semiconductors, and promises applications in the semiconductor industry, e.g., in IR detectors and other devices.
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Research context

Electronic materials

OpenAlex topics: Pigment Synthesis and Properties

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Affiliations

Bayerisches Geoinstitut Universität Bayreuth Universitätsstrasse 30 D‐95447 Bayreuth Germany

Institute of Metal Physics Russian Academy of Sciences Urals Division GSP‐170, 18 S. Kovalevskaya Str. Yekaterinburg 620219 Russia

Laboratory of Crystallography Universität Bayreuth D‐95440 Bayreuth Germany

Electron Microscopy for Materials Research (EMAT) University of Antwerp Groenenborgerlaan 171 B‐2020 Antwerp Belgium

National Institute of Chemical Physics and Biophysics Akadeemia tee 23 12618 Tallinn Estonia

Petra III, P02, Deutsches Elektronen Synchrotron Notkestr. 85 22607 Hamburg Germany

References

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