Semiconductor Nanowires: Tunable Quantum Confinement in Ultrathin, Optically Active Semiconductor Nanowires Via Reverse‐Reaction Growth (Adv. Mater. 13/2015)
Source abstract
Abstract
On page 2195, G. Koblmüller and co-workers demonstrate a unique reverse-reaction growth scheme to realize ultrathin GaAs nanowires epitaxially on Si. Correlated structural and optical experiments reveal huge blue-shifted photoluminescence (up to ∼100 meV) with decreasing nanowire diameter, in sound agreement with theoretical calculations of radial quantum confinement. Cover by Christoph Hohmann, Nanosystems Initiative Munich (NIM).
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Nanowire Synthesis and Applications
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Affiliations
Walter Schottky Institut, Physik Department and Nanosystems Initiative Munich TU München Am Coulombwall 4 85748 Garching Germany
Department of Chemistry LMU Munich Butenandtstr. 5‐13 81377 München Germany
Institute for Advanced Study TU München Lichtenbergstr. 2a 85748 Garching Germany
References
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