Field‐Effect Transistors: Sub‐10 nm Graphene Nanoribbon Array Field‐Effect Transistors Fabricated by Block Copolymer Lithography (Adv. Mater. 34/2013)

Arrays of field-effect transistors are described by Caroline Ross, Moon-Ho Ham and co-workers on page 4723. These are based on highly aligned sub-10 nm graphene nanoribbons that are fabricated over large areas by etching CVD-grown graphene, using a mask made by the directed self-assembly of a cylindrical PS-block-PDMS block copolymer under solvent annealing guided by a removable template.