An Optimized Ultraviolet‐A Light Photodetector with Wide‐Range Photoresponse Based on ZnS/ZnO Biaxial Nanobelt (Adv. Mater. 17/2012)

A novel 1D/1D semiconductor/semiconductor nanocomposite-based photodetector is fabricated by X. S. Fang and co-workers on page 2305 from highly crystalline ZnS/ZnO biaxial nanobelts. Optimized performance of the ZnS/ZnO nanobelt photodetector is better than that of pure ZnS or ZnO nanostructures, as it combines UV-A photoresponsivity, high sensitivity, and a fast response speed. This photodetector is particularly suitable for UV-A light detection, and its speed enables its potential application in highfrequency light-wave communications, photoelectronic switches, memory storage devices, and optoelectronic circuits.