Organic Field‐Effect Transistors: Single‐Crystal C₆₀ Needle/CuPc Nanoparticle Double Floating‐Gate for Low‐Voltage Organic Transistors Based Non‐Volatile Memory Devices (Adv. Mater. 1/2015)

On page 27, C.-L. Liu, W.-C. Chen, and co-workers report the first combination of “double floating-gate”, “ambipolar charge-carrier trapping”, and “discrete trapping sites” to produce high-performance organic non-volatile transistor memory devices using a heterostructure of single-crystal C60 needles/CuPc nanoparticles. The devices exhibit a wide memory window (ca. 4.4 V), low power consumption (within ±5 V), acceptable retention (ca. 104 s) and endurance (ca. 100 cycles), and ambipolar (hole/electron) trapping characteristics.