Transistors: High‐Mobility Transistors Based on Large‐Area and Highly Crystalline CVD‐Grown MoSe2 Films on Insulating Substrates (Adv. Mater. 12/2016)
Source abstract
Abstract
On page 2316, M. A. Alam, S. K. Kim, and co-workers describe a 2D layered semiconductor used to fabricate a mechanically flexible, high-mobility thin-film transistor based on large-area and highly crystalline MoSe2 films grown by chemical vapor deposition (CVD). It is thought that such high-mobility materials will be indispensable for various future applications, such as high-resolution displays and human-centric soft electronics.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: 2D Materials and Applications · Nanowire Synthesis and Applications · ZnO doping and properties
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Affiliations
Department of Applied Physics Kyung Hee University Yongin 17104 Korea
Multi‐Functional Nano/Bio Electronics Laboratory Kyung Hee University Gyeonggi 17104 Korea
School of Electrical and Computer Engineering Purdue University West Lafayette IN 47907 USA
Carbon Convergence Materials Research Center Korea Institute of Science and Technology Wanju‐gun 565‐905 Republic of Korea
References
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