Phototransistors: Giant Photoamplification in Indirect‐Bandgap Multilayer MoS2 Phototransistors with Local Bottom‐Gate Structures (Adv. Mater. 13/2015)
Source abstract
Abstract
Woong Choi, Sunkook Kim, Y. Yoon, and co-workers present local-gate multilayer MoS2 phototransistors with outstanding photoresponsivity of up to 342.6 A W−1, which is 3 orders of magnitude higher than that of global-gate multilayer MoS2 phototransistors, as described on page 2224. These results suggest that high photoresponsivity can be achieved in indirect-bandgap multilayer MoS2 phototransistors by optimizing the optoelectronic design.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: 2D Materials and Applications · GaN-based semiconductor devices and materials · Nanowire Synthesis and Applications
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Affiliations
Multi‐Functional Nano/Bio Electronics Lab Kyung Hee University Gyeonggi 446‐701 South Korea
Department of Electrical and Computer Engineering and Waterloo Institute for Nanotechnology (WIN) University of Waterloo Waterloo ON N2L 3G1 Canada
School of Advanced Materials Engineering Kookmin University Seoul 136‐702 South Korea
References
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