The Effect of Relative Humidity in Conductive Atomic Force Microscopy (Adv. Mater. 51/2024)
Source abstract
Abstract
Conductive Atomic Force Microscopy In article number 2405932, Yue Yuan and Mario Lanza clarify what is the effect of relative humidity in conductive atomic force microscopy. They measure over 17,000 different locations on the surface of ten different samples (insulating, semiconducting and conducting) under seven different relative humidity levels. In insulators and thick (>5 nm) semiconductors, the water meniscus at the tip/sample junction increases the currents registered.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Force Microscopy Techniques and Applications
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Affiliations
Materials Science and Engineering Program Physical Science and Engineering Division King Abdullah University of Science and Technology (KAUST) Thuwal 23955 Saudi Arabia
Department of Materials Science and Engineering National University of Singapore Singapore 117575 Singapore
References
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