Efficient Tandem Quantum‐Dot LEDs Enabled by An Inorganic Semiconductor‐Metal‐Dielectric Interconnecting Layer Stack (Adv. Mater. 4/2022)
Source abstract
Abstract
Quantum-Dot Light-Emitting Diodes Light-emitting diodes (LEDs) in a tandem configuration offer a strategy to realize high-performance, multi-color devices, but the efficiency of tandem quantum-dot based LEDs (QLEDs) has been limited due to unpassivated interfaces and solvent damage originating from the materials processing requirements of the interconnecting layers (ICLs). In article number 2108150, Edward H. Sargent, Xuyong Yang, and co-workers report an ICL consisting of a semiconductor–metal–dielectric stack that provides facile fabrication, materials stability, and good optoelectronic coupling, making the tandem QLED based on the ICL achieve recording efficiency.
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Research context
OpenAlex topics: Quantum Dots Synthesis And Properties
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Affiliations
Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University 149 Yanchang Road Shanghai 200072 China
Department of Electrical and Computer Engineering University of Toronto 35 St. George Street Toronto Ontario M5S 1A4 Canada
Institute of Solar Energy Materials and Devices College of Materials Science and Engineering Sichuan University No. 24 South Section 1, Yihuan Road Chengdu 610065 China
References
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