Organic Transistors: 25th Anniversary Article: Microstructure Dependent Bias Stability of Organic Transistors (Adv. Mater. 11/2014)
Source abstract
Abstract
Recent studies of the bias-stress-driven electrical instability of organic field-effect transistors are reviewed by K. Cho, D. H. Kim, and co-workers on page 1660. The principles underlying the bias instability are discussed, particularly the mechanisms of charge trapping. The charge-trapping phenomena in the semiconductor, the dielectric, and the semiconductor-dielectric interface are analyzed with special attention to the microstructural dependence of bias instability.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Organic Electronics and Photovoltaics · Semiconductor materials and devices · Thin-Film Transistor Technologies
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Affiliations
Department of Organic and Nano System Engineering Konkuk University Seoul 143–701 Korea
Department of Chemical Engineering Pohang University of Science and Technology Pohang 790–784 Korea
Department of Organic Materials and Fiber Engineering Soongsil University Seoul 156–743 Korea
References
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