journal article·2007-05-21

Mg3N2‐Ga: Nanoscale Semiconductor–Liquid Metal Heterojunctions inside Graphitic Carbon Nanotubes

J. Q. Hu, Y. Bando, J. H. Zhan, C. Z. Li, D. Golberg

Advanced Materials· Volume 19· Issue 10
Publisher page

Abstract

Mg3N2-Ga nanoscale semiconductor–liquid metal heterojunctions homogeneously coated with very thin graphitic carbon nanotube (GCNT) layers are fabricated (see figure). Most of the junctions have a uniform diameter of ca. 100–200 nm. GCNTs coated on the nanowire junctions are only several nanometers thick. A convergent electron beam generated in a transmission electron microscope is demonstrated to be an effective tool for delicate manipulation of a junction.
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Research context

OpenAlex topics: Semiconductor materials and devices · MXene and MAX Phase Materials · Advanced ceramic materials synthesis

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

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