The multiple tunnel junction and its application to single‐electron memories
Source abstract
Abstract
Single‐electron memories and single‐electron logic circuits are two devices that can be constructed from multiple tunnel junctions (MTJs). The electrical characteristics of this basic building block are described, and the fabrication of very small MTJ devices is outlined. The simple structure of the MTJ and the low power consumption and small size of MTJ devices could open up a new era in electron device technology, with devices being constructed from materials completely different from those used in the present semiconductor industry.
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Research context
OpenAlex topics: Quantum and electron transport phenomena · Semiconductor materials and devices · Physics of Superconductivity and Magnetism
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (25)
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