A Silicon Nanowire with a Coulomb Blockade Effect at Room Temperature
Source abstract
Abstract
An extremely narrow and thin silicon wire has been fabricated on a silicon-on-insulator wafer (see Figure). The room-temperature Coulomb blockade effects as well as the influence of a capacitively coupled gate on the transport properties of this conducting silicon quantum wire are studied. The results obtained are encouraging for the application of such wires in single-electron transistors.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Quantum and electron transport phenomena · Advancements in Semiconductor Devices and Circuit Design · Semiconductor materials and devices
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