Grain‐Boundary Engineering of Monolayer MoS2 for Energy‐Efficient Lateral Synaptic Devices (Adv. Mater. 32/2021)
Source abstract
Abstract
Synaptic Devices With lithography-free, directlaser-writing-controlled MoS2/MoS2−xOδ grain boundaries, synaptic devices fabricated by Kai Liu and co-workers, as described in article number 2102435, exhibit short-term and long-term plasticity characteristics that are responsive to electric and light stimulation simultaneously; they also exhibit a low energy consumption that is over 40 times lower than that of conventional complementary metal–oxide–semiconductors
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Conducting polymers and applications · Photoreceptor and optogenetics research
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Affiliations
State Key Laboratory of New Ceramics and Fine Processing School of Materials Science and Engineering Tsinghua University Beijing 100084 China
Institute of Physics Chinese Academy of Sciences Beijing 100190 China
Department of Precision Instrument Center for Brain Inspired Computing Research Tsinghua University Beijing 100084 China
References
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