DataVXAdvanced MaterialsPaper
journal article·2013-05-14

Structural and Optoelectronic Characterization of RF Sputtered ZnSnN2 (Adv. Mater. 18/2013)

Lise Lahourcade, Naomi C. Coronel, Kris T. Delaney, Sujeet K. Shukla, Nicola A. Spaldin, Harry A. Atwater

Advanced Materials· Volume 25· Issue 18
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Source abstract

Abstract

The development of earth-abundant semiconductors is an important step in working towards the realization of photovoltaic production on a global scale. On page 2562, Harry A. Atwater and co-workers successfully synthesize stoichiometric ZnSnN2, a new earth-abundant semiconductor material, which has a theoretical direct band gap of 1.42 eV, making it well suited for potential applications in thin film photovoltaics.
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Research context

Electronic materials

OpenAlex topics: Machine Learning in Materials Science

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