Nonvolatile Logic and Ternary Content‐Addressable Memory Based on Complementary Black Phosphorus and Rhenium Disulfide Transistors (Adv. Mater. 48/2022)
Source abstract
Abstract
Memory Cells In article number 2106321, Yanqing Wu and co-workers report the smaller footprint of nonconventional computing-in-memory devices based on black phosphorus and rhenium disulfide transistors. By adopting the charge-trapping mechanism, four-transistor nonvolatile ternary content-addressable memory cells are realized for parallel search operations with reduced complexity and thermal budget.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Fuel Cells and Related Materials · 2D Materials and Applications
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Affiliations
Institute of Microelectronics and Key Laboratory of Microelectronic Devices and Circuits (MOE) Peking University Beijing 100871 China
Wuhan National High Magnetic Field Center and School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan 430074 China
Frontiers Science Center for Nano‐Optoelectronics Peking University Beijing 100871 China
References
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