DataVXAdvanced MaterialsPaper
journal article·2018-04Open access

Perovskite p–n Junctions: Strong Depletion in Hybrid Perovskite p–n Junctions Induced by Local Electronic Doping (Adv. Mater. 15/2018)

Qingdong Ou, Yupeng Zhang, Ziyu Wang, Jodie A. Yuwono, Rongbin Wang, Zhigao Dai, Wei Li, Changxi Zheng, Zai‐Quan Xu, Xiang Qi, Steffen Duhm, Nikhil V. Medhekar, Han Zhang, Qiaoliang Bao

Advanced Materials· Volume 30· Issue 15
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Source abstract

Abstract

In article number 1705792, Yupeng Zhang, Han Zhang, Qiaoliang Bao, and co-workers report spatially controlled doping of individual organic–inorganic hybrid perovskite nanosheets through surface transfer doping. The resulting lateral p–n junctions exhibit unprecedentedly strong carrier-depletion characteristics with an ultrabroad depletion region up to 10 μm, which leads to highly efficient photodiodes with zero power consumption.
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Research context

NanomaterialsElectronic materials

OpenAlex topics: Perovskite Materials and Applications · Conducting polymers and applications

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Affiliations

Department of Materials Science and Engineering ARC Centre of Excellence in Future Low‐Energy Electronics Technologies (FLEET) Monash University Clayton Victoria 3800 Australia

College of Electronic Science and Technology and College of Optoelectronics Engineering Shenzhen University Shenzhen 518000 P. R. China

Institute of Functional Nano & Soft Materials (FUNSOM) Jiangsu Key Laboratory for Carbon‐Based Functional Materials & Devices Soochow University Suzhou 215123 P. R. China

Institut für Physik Humboldt‐Universität zu Berlin 12489 Berlin Germany

Laboratory of Printable Functional Nanomaterials and Printed Electronics School of Printing and Packaging Wuhan University Wuhan 430072 P. R. China

Department of Civil Engineering Monash University Clayton Victoria 3800 Australia

School of Physics and Optoelectronics Xiangtan University Hunan 411105 P. R. China

References

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