Enhanced Charge Injection Properties of Organic Field Effect Transistor by Molecular Implantation Doping

The legends and captions for Figure S8b,c in the Supporting Information of the originally published article were found to be switched with each other.The corrected Figure S8 is shown below.Figure 8. a-c) The time evolution of transfer curves for the doped/unetched PBTTT transistor with channel length L ch, of 50 m (a); the doped/ unetched PBTTT transistor with L ch = 100 m (b), the doped contact (doped/etched) PBTTT transistor with L ch = 50 m (c), and the doped contact PBTTT transistor with L ch = 100 m (d) over two months. CorreCtion