Growth of GaAs and Al GaAs by chemical beam epitaxy—precursor requirements and recent developments
Source abstract
Abstract
Semiconductor layers of gallium arsenide and aluminum gallium arsenide are finding increasing application in photonic (solar cells, LEDs, etc.) and microwave (e.g. HEMTs) devices. The ultra‐high vacuum technique “chemical beam epitaxy” (see Figure) can be effectively used to produce such layers. The method and its competitors are compared. magnified image
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Research context
OpenAlex topics: Semiconductor Lasers and Optical Devices · Semiconductor Quantum Structures and Devices · Photonic and Optical Devices
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